issue 1 - march 2006 1 www.zetex.com ? zetex semiconductors plc 2006 ZXTP25100BFH 100v, sot23, pnp medium power transistor summary bv (br)cex > -140v, bv (br)ceo > -100v bv (br)ecx > -7v ; i c(cont) = -2a v ce(sat) < -130mv @ -1a r ce(sat) = 108m typical p d = 1.25w complementary part number zxtn25100bfh description advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. the compact size and rating s of this device make it ideally suited to applications where space is at a premium. features ? high power dissipation sot23 package high peak current low saturation voltage 140v forward blocking voltaget 7v reverse blocking voltage applications mosfet and igbt gate driving dc - dc converters motor drive relay, lamp, and solenoid drive ordering information device marking 056 device reel size (inches) tape width quantity per reel ZXTP25100BFHta 7 8mm 3,000 c e b pinout - top view
ZXTP25100BFH issue 1 - march 2006 2 www.zetex.com ? zetex semiconductors plc 2006 absolute maximum ratings notes: (a) for a device surface mounted on 15mm x 15mm x 1.6mm fr 4 pcb with high coverage of single sided 1oz copper, in still air conditions. (b) mounted on 25mm x 25mm x 1.6mm fr4 pcb with a high coverage of single sided 2 oz copper in still air conditions. (c) mounted on 50mm x 50mm x 1.6mm fr4 pcb with a high coverage of single sided 2 oz copper in still air conditions. (d) as (c) above measured at t<5secs. parameter symbol limit unit collector-base voltage v cbo -140 v collector-emitter voltage (forward blocking) v cex -140 v collector-emitter voltage v ceo -100 v emitter-collector voltage (reverse blocking) v ecx -7 v emitter-base voltage v ebo -7 v continuous collector current (b) i c -2 a peak pulse current i cm -5 a power dissipation at t a =25c (a) linear derating factor p d 0.73 5.84 w mw/c power dissipation at t a =25c (b) linear derating factor p d 1.05 8.4 w mw/c power dissipation at t a =25c (c) linear derating factor p d 1.25 9.6 w mw/c power dissipation at t a =25c (d) linear derating factor p d 1.81 14.5 w mw/c operating and storage temperature range t j , t stg -55 to 150 c thermal resistance parameter symbol limit unit junction to ambient (a) r ja 171 c/w junction to ambient (b) r ja 119 c/w junction to ambient (c) r ja 100 c/w junction to ambient (d) r ja 69 c/w
ZXTP25100BFH issue 1 - march 2006 3 www.zetex.com ? zetex semiconductors plc 2006 characteristics
ZXTP25100BFH issue 1 - march 2006 4 www.zetex.com ? zetex semiconductors plc 2006 electrical characteristics (at t amb = 25c unless otherwise stated) parameter symbol min. typ. max. unit conditions collector-base breakdown voltage bv cbo -140 -165 v i c = -100 a collector-emitter breakdown voltage (forward blocking) bv cex -140 -165 v i c = -100 a, r be < 1k or -0.25v < v be < 1v collector-emitter breakdown voltage (base open) bv ceo -100 -125 v i c = -10ma (*) emitter-collector breakdown voltage (reverse blocking) bv ecx -7 8.2 v i e = -100 a, r bc < 1k or -0.25v < v bc < 0.25v emitter-base breakdown voltage bv ebo -7 -8.2 v i e = -100 a collector cut- off current i cbo <-1 -50 -20 na a v cb = -112v v cb = -112v, t amb = 100c collector emitter cut-off current i cex --100nav ce = -112v; r be < 1k or -0.25v < v be < 1v emitter cut-off current i ebo <-1 -50 na v eb = -5.6v collector-emitter saturation voltage v ce(sat) -60 -90 mv i c = -0.5a, i b = -50ma (*) notes: (*) measured under pulsed conditions. pulse width 300 s; duty cycle 2%. -240 -350 mv i c = -0.5a, i b = -10ma (*) -100 -130 mv i c = -1a, i b = -100ma (*) -215 -295 mv i c = -2a, i b = -200ma (*) base-emitter saturation voltage v be(sat) -900 -1000 mv i c = -2a, i b = -200ma (*) base-emitter turn-on voltage v be(on) -830 -950 mv i c = -2a, v ce = -2v (*) static forward current transfer ratio h fe 100 200 300 i c = -10ma, v ce = -2v (*) 55 105 i c = -1a, v ce = -2v (*) 15 25 i c = -2a, v ce = -2v (*) transition frequency f t 200 mhz i c = -100ma, v ce = -5v f = 100mhz output capacitance c obo 15 25 pf v cb = -10v, f = 1mhz (*) turn-on time t (on) 31 ns v cc = -10v, i c = -500ma, i b1 = i b2 = -50ma turn-off time t (off) 384 ns
ZXTP25100BFH issue 1 - march 2006 5 www.zetex.com ? zetex semiconductors plc 2006 typical characteristics
ZXTP25100BFH issue 1 - march 2006 6 www.zetex.com ? zetex semiconductors plc 2006 for international sales offices visit www.zetex.com/offices zetex products are distributed worldwide. for details, see www.zetex.com/salesnetwork this publication is issued to provide outline information only whic h (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. the company reserves the right to alter without notice the specif ication, design, price or conditions of supply of any product or service. europe zetex gmbh streitfeldstra?e 19 d-81673 mnchen germany telefon: (49) 89 45 49 49 0 fax: (49) 89 45 49 49 49 europe.sales@zetex.com americas zetex inc 700 veterans memorial highway hauppauge, ny 11788 usa telephone: (1) 631 360 2222 fax: (1) 631 360 8222 usa.sales@zetex.com asia pacific zetex (asia ltd) 3701-04 metroplaza tower 1 hing fong road, kwai fong hong kong telephone: (852) 26100 611 fax: (852) 24250 494 asia.sales@zetex.com corporate headquarters zetex semiconductors plc zetex technology park, chadderton oldham, ol9 9ll united kingdom telephone: (44) 161 622 4444 fax: (44) 161 622 4446 hq@zetex.com package outline - sot23 note: controlling dimensions are in millimeters. ap proximate dimensions are provided in inches dim. millimeters inches dim. millimeters inches min. max. min. max. min. max. max. max. a 2.67 3.05 0.105 0.120 h 0.33 0.51 0.013 0.020 b 1.20 1.40 0.047 0.055 k 0.01 0.10 0.0004 0.004 c - 1.10 - 0.043 l 2.10 2.50 0.083 0.0985 d 0.37 0.53 0.015 0.021 m 0.45 0.64 0.018 0.025 f 0.085 0.15 0.0034 0.0059 n 0.95 nom 0.0375 nom g 1.90 nom 0.075 nom - - - - - l n h g a c f b m k d 3 leads
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